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Figure 2
1D scattering profiles extracted from the 2D GIXS patterns of the SiOCH dielectric films prepared using various BTMSM flow rate ratios, Rfr, and subsequently annealed at 673 K: (a) in-plane scattering profiles extracted at αf = 0.18°; (b) out-of-plane scattering profiles at 2θf = 0.27°. The symbols are the experimental data and the solid lines were obtained by fitting the data with the GIXS formula for spherical scatterers.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 40| Part s1| December 2007| Pages s614-s619
doi:10.1107/S0021889806054124
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