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Figure 4
(a) A representative X-ray reflectivity profile of an SiOCH film deposited with Rfr = 85% and subsequently annealed at 673 K. The symbols are the measured data and the solid line represents the fit curve assuming a homogeneous electron density distribution within the film except for a thin surface skin layer, in which the electron density is slightly different. The inset shows a magnification of the region around the two critical angles: αc,f is the critical angle of the film and αc,s is the critical angle of the Si substrate. (b) A model of the electron density distribution across the film thickness between the silicon substrate and air, which gives the best fit for the XR profile in (a).

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CRYSTALLOGRAPHY
ISSN: 1600-5767
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