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Figure 10
Integral breadth broadening data scaled by the square of the applied load magnitude [\Delta\beta / \sigma_\parallel^2] for various reflections (HKL and corresponding color indicated in legend) for (top) a Cu thin film on an Si wafer cooled from room temperature to 153 K, resulting in a biaxially rotationally symmetric stress state of [\sigma_\parallel\equiv\sigma_{11} = \sigma_{22} = 280] MPa, (middle) an Nb thin film on an Al wafer cooled from room temperature ([\sigma^{\rm res}_\parallel = 350] MPa) to 153 K, resulting in an applied compressive rotationally symmetric biaxial stress state of approximately [\sigma_\parallel\equiv\sigma_{11} = \sigma_{22} = -350] MPa, and (bottom) a W thin film on an Al wafer cooled from room temperature ([\sigma^{\rm res}_\parallel =] 1460 MPa) to 153 K, resulting in an additionally applied compressive rotationally symmetric biaxial stress state of approximately [\sigma_\parallel\equiv\sigma_{11} =] [\sigma_{22} = -1260] MPa (i.e. [\sigma_\parallel\equiv\sigma_{11} = \sigma_{22} = -2720] MPa).

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 47| Part 1| February 2014| Pages 391-401
doi:10.1107/S1600576713032202
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