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Figure 3
Linecuts (a) III at qz = 1.01 nm−1 and (b) IV of the simulated 2D GISAXS pattern of the model sample (step 4, open black symbols) and of a simulation including only the substrate with the parameters given in Table S1 of the supporting information (step 1, grey line). The vertical dashed line in (b) indicates the critical angle of the substrate, αc,sub. The inset in (b) shows a close-up of the Yoneda band region from 0.2 to 0.4 nm−1. (c) Residual plot (Istep4 − Istep1)/Istep4. Horizontal and vertical dashed lines indicate the positions of linecuts III and IV, respectively.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 56| Part 5| October 2023| Pages 1330-1347
https://doi.org/10.1107/S1600576723006520
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