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Figure 6
(a) shows a diffraction pattern of data set 3. The central part of the diffraction pattern has already been rescaled by the attenuation mask of the STCS. (b) shows enlarged parts of the diffraction pattern in (a). The intermediate region between adjacent chips where the remapping of the recorded intensity from larger to smaller pixels yields good results due to high photon count rates can be seen on the region with a solid grey frame. The other region highlights the high-frequency oscillations of the KB farfield on the detector (dashed grey frame). (c) presents the recontructed phase of the lying nanowire corresponding to the data recording using the STCS (data set 3). The nanowire is the same as in data set 2 (Fig. 5[link]d). It yields an average phase shift of [\langle \Delta\Phi _{{\rm body}}\rangle = (-0.0350 \pm 0.0006)] rad on the body (white frame) and [\langle \Delta\Phi _{{\rm head}}\rangle = (-0.0636 \pm 0.0006)] rad on the head (dashed white frame) after background subtraction (black frame). (d) shows the line profile in (c) as indicated by a dashed white line. A Gaussian (FWHM = 247 nm) is well fitted to the profile. Scale bars in (a) and (c) denote 10 µm−1 and 500 nm, respectively.

ISSN: 2053-2733
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