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Figure 7
Experimental (dots) and theoretical (bold lines) shapes of the same 111 reflection for (a) η-Al2O3 and (b) γ-Al2O3. In the first case, there are defects lying on a single plane of the {111} family which are bound by the half-dislocation; in the second case, intersecting defects on ([1\bar 11)] and [(\bar 111]) are bounded by the half-dislocations at a dislocation density equal to 20%. Reproduced with permission from Tsybulya & Kryukova (2008BB100). Copyright (2008) the American Physical Society.

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APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 58| Part 4| August 2025| Pages 1085-1105
https://doi.org/10.1107/S1600576725004728
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