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Figure 1
Sample and experiment setup. (a) Cross-sectional MPPL image of the HVPE GaN sample. The interface between the thick HVPE-grown film and the GaN substrate is located at around Y = 15 µm. The nanoXRD measurement area is marked by a rectangle. (b) Schematic of the diffraction geometry and the spatial step between sampling points of ΔX = ΔY = 1 µm with an angular step of δω = 0.002°.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 58| Part 4| August 2025| Pages 1205-1219
https://doi.org/10.1107/S1600576725004169
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