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![[Figure 2]](po5162fig2mag.jpg)
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Figure 2
Illustrations of OPBs in BiT and their effects. (a) A cross-sectional TEM image of a pair of OPBs in a thin film of BiT grown by atomic vapour deposition (AVD) onto a (100) STO substrate (Deepak et al., 2013  ). The bright horizontal lines in the image are the Bi2O2 layers in the Aurivillius structure. (b) A schematic diagram showing how a step at the STO–BiT interface nucleates the formation of an OPB, which displaces the atomic structure on one side of the boundary relative to the other, in this case by around 4 Å parallel to the crystallographic c axis. The OPB can also be associated with localized regions of higher m. (c) A higher-magnification cross-sectional TEM image of the thin film showing how the OPBs form an array with reasonably regular spacing, inclined at an angle of ca 40° to the substrate surface. Parts (d) and (e) show the XRD plots of intensity versus 2θ for the 004 and 0 0 12 reflections from the film illustrated in (a) and (c), showing how the 004 and 0 0 12 peaks are split [(c), (d) and (e) are reproduced from Deepak et al. (2013) with permission from AIP publishing]. |
![[Figure 2]](po5162fig2.jpg)
 | JOURNAL OF APPLIED CRYSTALLOGRAPHY |
ISSN: 1600-5767
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