Convergent-beam X-ray crystallography

Li, C.; Zakharova, M.; Prasciolu, M.; Wong, J.C.; Fleckenstein, H.; Ivanov, N.; Zhang, W.; Butola, M.; Dresselhaus, J.L.; Aquino, I.D.G.; Egorov, D.; Middendorf, P.; Henkel, A.; Klopprogge, B.; Klemeyer, L.; Beck, T.; Yefanov, O.; Barthelmess, M.; Sprenger, J.; Oberthuer, D.; Bajt, S.; Chapman, H.N.

doi:10.1107/S1600576726005236

Journal of Applied Crystallography Journal of Applied
Crystallography

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Figure 4
Rotation CBXD topographs of a silicon wedged single crystal with a hole, cut as a perpendicular lamella from a (100) Si wafer using a focused ion beam. (a) Scanning electron micrographs of the crystal. (b) The deficiency line and Bragg streak remain separated by $[2\theta_{\rm B}]$ and move together (here horizontally) as the crystal is rotated, to map out the projected view of a defocused crystal. (c) Rotation diffraction pattern formed by summing exposures over a range of ±15° about the vertical axis with a step size of 0.02°. (d) A distorted topograph from the $[\bar{1}1\bar{3}]$ reflection. (e) Line profiles of the measured and simulated topograph intensity along the positions indicated in (d). Experimental (f) and simulated (g) rotation topographs obtained with a coarse rotation step of 0.2°.

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CRYSTALLOGRAPHY

ISSN: 1600-5767

Volume 59| Part 4| August 2026| Pages 1200-1218

https://doi.org/10.1107/S1600576726005236

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