Prediction of fully compensated ferrimagnetic spin-gapless semiconducting FeMnGa/Al/In half Heusler alloys

Zhang, Y.J.; Liu, Z.H.; Wu, Z.G.; Ma, X.Q.

doi:10.1107/S2052252519005062

Figure 1
Schematic presentation of the spin-gapless semiconducting (a) and the compensated magnetic (b) properties. The compensated magnetism comes from different magnetic ions situated at sublattices A and B in an alloy.

IUCrJ

Volume 6| Part 4| July 2019| Pages 610-618

ISSN: 2052-2525

https://doi.org/10.1107/S2052252519005062

MATERIALS | COMPUTATION

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