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Figure 4
Spin-gapless semiconducting properties of C1b-ordered FeMnGa. (a) Schematic illustration of hybridization sitting at Fe and Mn sites; (b), (d) band structure; and (c) DOS at the equilibrium lattice constant. The band structure and DOS exhibit spin-gapless semiconducting properties and full spin polarization near the Fermi energy EF.

IUCrJ
Volume 6| Part 4| July 2019| Pages 610-618
ISSN: 2052-2525
https://doi.org/10.1107/S2052252519005062