X-ray diffraction studies of annealed Czochralski-grown silicon. I. Double-crystal diffractometry

X-ray reflection properties are reported of annealed Czochralski-grown silicon (ACS) single crystals at photon energies between 8 and 50 keV, studied by double- and triple-crystal diffractometry (DCD and TCD, respectively) and with X-radiation from sealed-tube sources. The report is divided into two parts. In this paper (paper I), the results of double-crystal topography and rocking-curve measurements are discussed in detail with regard to the application of ACS for the monochromatization of synchrotron X-radiation in the above-mentioned energy range. The analysis of the defects which enhance the reflectivity of ACS compared with that of perfect float-zone-grown silicon, carried out by TCD measurements and transmission electron microscopy, is presented in the following paper (paper II). [Zaumseil, Joksch & Zulehner (1993). J. Appl. Cryst. 26, 192-197].