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Figure 3
(a) Sequence of Ge K-edge XANES spectra recorded in 120 ms spectrum−1 during a rapid cooling from the melt: the metal–semiconductor transition appears at ∼350 K below the melting point, with the absorption edge gradually shifting towards higher energies, indicative of the formation of the gap. (b) Sequence of Ge K-edge EXAFS spectra recorded in 520 ms spectrum−1 during a rapid cooling. The initial temperature is 1115 K, while the final temperature is 732 K. The temperature variation is not linear with time.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 6| Part 5| September 1999| Pages 1044-1050
doi:10.1107/S0909049599004513
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