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Figure 6
Comparison of micro-Laue spots for different implanted silicon samples and AlxGa1−xAs samples. (a) For the [14_\prime\bar4_\prime2] reflection using 0.17 Å radiation in the same sample as in Fig. 4[link]. (b) For implanted and (c) non-implanted areas of the same bent silicon sample as in Fig. 5[link] taken for the 335 reflection using 0.65 Å radiation. (d) For AlxGa1−xAs implanted with a dose of 2 × 1014 cm−2 of 1.5 MeV Se ions in the 206 reflection using 0.55 Å radiation. In the complete Laue pattern the long tails of the spot shown in (a), (b) and (c), as well as the lowest most-intensive fragment of spot in (d), point towards the intersection of the incident beam with the film proving that they are formed by the radiation located in the plane of diffraction. Magnification: ×20.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 7| Part 5| September 2000| Pages 318-325
doi:10.1107/S0909049500009420
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