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Figure 6
Absorption spectrum of 2 ML InAs on GaAs at the In K-edge collected with a 13-element Ge detector and integrating 3 s point−1. Inset: the reflectivity spectrum at 28 keV; the arrow marks the working angle, near the critical value.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 10| Part 3| April 2003| Pages 260-264
doi:10.1107/S0909049503005582
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