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Figure 4
(a) Position of the rocking curve of the sagittally bent Si (111) crystal as a function of the distance from the center of the sagittal crystal. Measurements are performed at 1 Å in the sample focusing geometry. (b) Intensity after DCM as a function of the beam defining slit position for the Si (111) flat crystal (open circles), and the sagittally bent Si (111) crystal (closed circles). The dashed curve represents calculated DCM flux throughput for the sagittal focusing with anticlastic curvature as measured experimentally and is shown in (a). Measurements and calculations were performed at 1 Å and in the sample focusing geometry (when applicable).

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 16| Part 5| July 2009| Pages 647-657
doi:10.1107/S0909049509022353
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