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Figure 6
Experimental and fitted data for the dependence of the incident flux over the silicon photodiode current. The ratio at different energies was normalized with respect to its value at 10 keV. Through the fitting procedure, the thickness of the silicon photodiode was determined to be equal to: (296 ± 5) µm

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 25| Part 1| January 2018| Pages 189-203
https://doi.org/10.1107/S1600577517016332
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