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Figure 5
Tender X-ray imaging and S XAS of a thin section of Monterey Formation (a). Panels (b), (c) and (d) show the XRF maps of Si, P and S, respectively, acquired with an incident beam energy of 2560 eV, a 35 µm pinhole and 5 ms dwell time. Numbered points in panel (d) show locations of S XANES corresponding to the numbered spectra in panel (e). A sulfate standard is shown for reference. Panels (f)–(i) show maps taken from the region in the yellow box in panel (d) with incident beam energies corresponding to S XANES resonances present in panel (e). All map intensities scaled from 0 to 250 counts.

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