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Figure 2
N K-edge XANES spectra for N-containing SiO2/SiC samples annealed in NO ambient and NO-POA along with that for the Si–N film sample (bottom). For Si–N, the intensity (I/I0) is smaller and the background is constant at 0.22. |
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Figure 2
N K-edge XANES spectra for N-containing SiO2/SiC samples annealed in NO ambient and NO-POA along with that for the Si–N film sample (bottom). For Si–N, the intensity (I/I0) is smaller and the background is constant at 0.22. |