Figure 4
The simulated N K-edge XANES spectra for N incorporated at the SiO2/SiC interface [in Fig. 3(a)–3(e)] along with that of bulk α-Si3N4 (bottom). For comparison, the measured spectra for N-containing SiO2/SiC samples are also depicted. The measured spectra were normalized after the backgrounds were subtracted, and were shifted in energy with reference to silicon nitride. |