Figure 2
Spectrum simulation of APS undulator A through a 0.6 mm × 0.6 mm main slit (first-harmonic peak set at 8 keV), reflectivity of a single-layer deposit of 10 nm Rh on the silicon substrate with 6 mrad (0.34°) incident angle assuming a perfect optic and radiation spectrum after rejection mirror. Higher harmonics are significantly suppressed. |