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Figure 1
(a) An SEM micrograph of a typical measurement chip (WBVB08). The current and voltage Ag electrodes are labelled as I+, I− and V+, V−, respectively. The arrow represents the synchrotron nanobeam used for crystal irradiation. (b) The 3D model used for the FEM simulations. Sapphire pads under the Bi2Sr2CaCu2O8+δ crystal represent the regions of strong thermal contact between substrate and crystal. As observed at the SEM, a 1 µm-thick air layer is present under the crystal between these two pads to take into account the poor thermal contact between crystal and substrate. The air layer above the crystal is 100 µm thick (not to scale) and the sapphire substrate is 100 µm thick (not to scale). The red solid arrow indicates the position and direction of the nanobeam. x, y and z axes of the reference frame are oriented along the a, b and c crystallographic axes, respectively.

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