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Figure 4
Six enlarged topographs located in their proper positions in the diffraction pattern of a sample cut from a large silicon crystal. Images of dislocation [\vec{\ell}] are elongated with red lines. Lines intersect at point P determined by angle δ above and right of center O. The thickness of the sample is enlarged for clarity. On the left side, point P and the v-axis are projected to the yz coordinate system.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 27| Part 6| November 2020| Pages 1674-1680
https://doi.org/10.1107/S1600577520011248
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