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Figure 4
GSENSE400BSI-TVISB (red dots) and GSENSE400BSI-GP (blue diamonds) QE measurements compared with a theoretical model (dashed curves). The models are calculated from equation (2)[link] with thicknesses of 30 nm of SiO2, 63 nm of SiN4, 11 µm for the Epi-Si and a dead layer of 60 nm for GSENSE400BSI-TVISB, and thicknesses of 4 µm Epi-Si and a dead layer of 45 nm for GSENSE400BSI-GP.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 27| Part 6| November 2020| Pages 1577-1589
https://doi.org/10.1107/S160057752001262X
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