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Figure 4
Annealed sample made of the 4.5 µm-thick MBE-grown HgCdTe/CdZnTe abrupt structure of the as-grown wafer after annealing. (a) SIMS profiles with respective cadmium (black, left scale) and zinc (blue, right scale) fraction. (b) Strain derived from micro-Laue measurements in red and the calculated bi-axial strain in magenta using SIMS data in (a) for HgCdZnTe to evaluate the local lattice parameter.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 28| Part 1| January 2021| Pages 181-187
https://doi.org/10.1107/S1600577520013211
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