Figure 6
The quantum efficiency of the pnCCD sensor in the energy range between 100 eV and 30 keV is shown. The black dashed line and the red solid line correspond to the quantum efficiency of a pnCCD sensor with a 150 nm and 60 nm thick aluminium entrance window, respectively. For comparison, the quantum efficiency of an entrance window without an aluminium layer is shown (solid black line). Note that in the current installation an Al thickness of 150 nm is applied, while a future upgrade is planned with a 60 nm thick Al coating. The gray area marks the baseline photon energy available at the SQS instrument. |