Effect of germanium auto-diffusion on the bond lengths of Ga and P atoms in GaP/Ge(111) investigated by using X-ray absorption spectroscopy

Roychowdhury, R.; Rajput, P.; Kumar, S.; Kumar, R.; Bose, A.; Jha, S.N.; Sharma, T.K.; Dixit, V.K.

doi:10.1107/S160057752001629X

Journal of Synchrotron Radiation Journal of
Synchrotron Radiation

IUCr IT WDC

home archive editors for authors for readers submit subscribe open access

view article

Figure 2
(a) Concentration profile of Ge, Ga and P atoms with depth in the GaP epilayer obtained from SIMS. (b) Depth profile of charge carrier density in the GaP epilayer measured from ECV. The dip observed in the ECV profile is shown in the inset of the figure.

JOURNAL OF
SYNCHROTRON
RADIATION

ISSN: 1600-5775

Volume 28| Part 2| March 2021| Pages 480-489

https://doi.org/10.1107/S160057752001629X

Follow J. Synchrotron Rad.

Search IUCr Journals		doi		Advanced search
Author		volume	page