Figure 5
(a) Sherman function S = ACL/P0 calculated from CL asymmetry, shown in the insert: dependence of the degree of CL polarization (spin asymmetry ACL) on the energy of injected electrons at T = 300 K (red squares) and T = 90 K (blue circles). (b) Dependence of the integrated nonpolarized CL intensity (logarithmic scale) on the energy of the electrons injected into the AlxGa1−xAs/GaAs/AlxGa1−xAs heterostructure with QWs. The insert shows the photocurrents as a function of applied bias. (c) Resulting efficiency F = S2Nph/Nel as a function of the injecting electron energy, where Nph is the emitted photon number and Nel is the incident electron number (number of outcoming photons per incident electron). The energy of the injected electrons is proportional to the bias between the anode and cathode, and the elementary charge of the electron. |