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Figure 10
Angle-integrated Si 2p photoemission spectra measured at (a) position A, (b) position B and (c) position C on the Si(111) wafer in Fig. 9[link](c). The value of hν was 750 eV. The total ΔE was 90 meV. The sample temperature was 80 K. The beam spot on the sample was 5 µm × 4 µm in size.

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