view article
Figure 10
Angle-integrated Si 2p photoemission spectra measured at (a) position A, (b) position B and (c) position C on the Si(111) wafer in Fig. 9[link](c). The value of hν was 750 eV. The total ΔE was 90 meV. The sample temperature was 80 K. The beam spot on the sample was 5 µm × 4 µm in size.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 28| Part 5| September 2021| Pages 1631-1638
https://doi.org/10.1107/S1600577521007487
Follow J. Synchrotron Rad.
Sign up for e-alerts
E-alerts
Follow J. Synchrotron Rad. on Twitter
Twitter
Follow us on facebook
Facebook
Sign up for RSS feeds
RSS