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Figure 11
Constant energy cuts at two representative EBs measured at position A on the Si(111) surface indicated in Fig. 9[link](c). The energy fixed mode of the DA30 analyzer was used. The value of hν was 750 eV. The total ΔE was 90 meV. The sample temperature was 80 K. The beam spot on the sample was 5 µm × 4 µm in size.

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