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Figure 5
(a) Angle-integrated Si 2p core-level photoemission spectrum measured for an Si(111) wafer with native surface oxide. The glancing angle was 45°. (b) Photoemission intensities at different glancing angles relative to the intensity at 45°. Each intensity was obtained by integrating the Si 2p spectrum measured at each angle over the whole energy range in (a). (c) Valence band dispersions along the ΓX direction measured for the same sample with a glancing angle of 2°, where the photoemission intensity was maximized. Here, θx is the angle along the longer side of the rectangular slit of the analyzer as indicated in Fig. 2[link]. For all the measurements in this figure, hν was 750 eV, the total ΔE was 90 meV and the sample was at room temperature.

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