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Figure 5
(a) Angle-integrated Si 2p core-level photoemission spectrum measured for an Si(111) wafer with native surface oxide. The glancing angle was 45°. (b) Photoemission intensities at different glancing angles relative to the intensity at 45°. Each intensity was obtained by integrating the Si 2p spectrum measured at each angle over the whole energy range in (a). (c) Valence band dispersions along the Γ–X direction measured for the same sample with a glancing angle of 2°, where the photoemission intensity was maximized. Here, θx is the angle along the longer side of the rectangular slit of the analyzer as indicated in Fig. 2[link]. For all the measurements in this figure, hν was 750 eV, the total ΔE was 90 meV and the sample was at room temperature.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 28| Part 5| September 2021| Pages 1631-1638
https://doi.org/10.1107/S1600577521007487
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