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Figure 6
(a) Schematic of mounting an Si[(1\bar 10)] wafer with a thickness of 0.5 mm. The (111) side plane cleaved in situ was used for ARPES measurements. The glancing angle was 5°. (b) View of the camera described in Fig. 3[link]. The intersection of the white cross lines indicates the beam position. The bright area indicated by a dashed rectangle is the well cleaved (111) surface illuminated by the visible light described in Fig. 3[link].

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