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Figure 6
(a) Schematic of mounting an Si[(1\bar 10)] wafer with a thickness of 0.5 mm. The (111) side plane cleaved in situ was used for ARPES measurements. The glancing angle was 5°. (b) View of the camera described in Fig. 3[link]. The intersection of the white cross lines indicates the beam position. The bright area indicated by a dashed rectangle is the well cleaved (111) surface illuminated by the visible light described in Fig. 3[link].

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 28| Part 5| September 2021| Pages 1631-1638
https://doi.org/10.1107/S1600577521007487
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