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Figure 7
Results of the DA30 angular mapping performed for the Si wafer described in Fig. 6[link]. The value of hν was 750 eV. The total ΔE was 90 meV. The sample temperature was 86 K. The energy-fixed mode of the DA30 analyzer was used. The total measurement time was 40 min. (a) Valence band dispersions at two representative deflection angles of +0.4° and +2.0°. (b) Constant energy cuts at two representative EBs of 1.5 eV and 4.0 eV. The energy window is 200 meV. Here, θy is the deflection angle along the shorter side of the rectangular slit of the analyzer as indicated in Fig. 2[link].

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