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Figure 9
(a) Optical microscope image of the Si(111) wafer before the ARPES measurements. (b) Optical microscope image of the Si(111) wafer after scratching the surface in situ. Note that this image was observed not by the camera in Fig. 3[link] but by another camera mounted on a viewport. (c) SEM image of the Si(111) wafer observed ex situ after the ARPES measurements. Positions A, B, and C indicate the positions at which the ARPES measurements were performed. Position A is a cleaved area ∼20 µm in size. Position B is a scratched area. Position C is a pristine area. Note that the pristine surface before scratching was polished with a fine polishing sheet under air so that any dispersions were not observed on the pristine surface.

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