Figure 7
Momentum patterns of bismuthene and zero-layer graphene on SiC(0001), recorded at the U125-2_NIM of BESSY II. Results have been recorded for bismuthene in a special `island-orbit' filling mode of the storage ring, in which four bunches travel on an orbit oscillating around the equatorial plane and for graphene in few-bunch mode. (a–d) kx–ky sections through a data array I(EB,kx,ky), recorded at hν = 18 eV. The valence-band maximum lies 0.2 eV below EF (a); the opening of the cones with increasing binding energy is visible in (b–d). (e) Structure of bismuthene on SiC(0001). (f–g) Analogous results for zero-layer graphene, recorded at hν = 23 eV with few-bunch filling of BESSY II. The Dirac point lies at EF (f) and the opening cones show the well known triangular cross sections (g–j). For this sample a (2 × 2) superstructure is present, sketched as dashed triangles in the inset in (i). (k–p) EB-versus-kx sections showing the linear band dispersions for bismuthene (k–n) and graphene (o, p). Panels (m, n) show the cones of the first BZ and (p) shows the `mirrored cones' of the (2 × 2) structure. |