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Figure 7
Momentum patterns of bis­muthene and zero-layer graphene on SiC(0001), recorded at the U125-2_NIM of BESSY II. Results have been recorded for bis­muthene in a special `island-orbit' filling mode of the storage ring, in which four bunches travel on an orbit oscillating around the equatorial plane and for graphene in few-bunch mode. (ad) kxky sections through a data array I(EB,kx,ky), recorded at hν = 18 eV. The valence-band maximum lies 0.2 eV below EF (a); the opening of the cones with increasing binding energy is visible in (bd). (e) Structure of bis­muthene on SiC(0001). (fg) Analogous results for zero-layer graphene, recorded at hν = 23 eV with few-bunch filling of BESSY II. The Dirac point lies at EF (f) and the opening cones show the well known triangular cross sections (gj). For this sample a (2 × 2) superstructure is present, sketched as dashed triangles in the inset in (i). (kp) EB-versus-kx sections showing the linear band dispersions for bis­muthene (kn) and graphene (o, p). Panels (m, n) show the cones of the first BZ and (p) shows the `mirrored cones' of the (2 × 2) structure.

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RADIATION
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