Figure 1
Change of the exit beam height, Δh, of a Si (111) DCM between 2.1 and 20.0 keV (a–d) due to an error, εg, in the crystal gap calibration, as determined from equation (4) and (e–h) due to a miscut, α, that is not taken into account when setting the crystal gap, as determined from equation (11). Multiplication of the value on the vertical axis by εg for (a–d) and hfα for (e–h) gives Δh, where Δh is the difference between h(θ) at the value of (a, e) energy, (b, f) , (c, g) , or (d, h) θ given on the horizontal axis and h(θ) at 2.1 keV. |