|
Figure 1
Change of the exit beam height, Δh, of a Si (111) DCM between 2.1 and 20.0 keV (a–d) due to an error, εg, in the crystal gap calibration, as determined from equation (4) ![]() ![]() |
Open
access

|
Figure 1
Change of the exit beam height, Δh, of a Si (111) DCM between 2.1 and 20.0 keV (a–d) due to an error, εg, in the crystal gap calibration, as determined from equation (4) ![]() ![]() |