view article
Figure 4
Numerical evaluation of on-axis intensity for a 250 µm-thick flat Si111 crystal (R = ∞) with source at the crystal entrance surface (p = 0) calculated using equation (18)[link]. (a) Simulation for a photon energy of 8.3 keV. (b) Simulation for a photon energy of 17 keV. Numerical values of these simulations are given in Table 1[link].

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 29| Part 1| January 2022| Pages 148-158
https://doi.org/10.1107/S1600577521012480
Follow J. Synchrotron Rad.
Sign up for e-alerts
E-alerts
Follow J. Synchrotron Rad. on Twitter
Twitter
Follow us on facebook
Facebook
Sign up for RSS feeds
RSS