|
Figure 4
Numerical evaluation of on-axis intensity for a 250 µm-thick flat Si111 crystal (R = ∞) with source at the crystal entrance surface (p = 0) calculated using equation (18) ![]() ![]() |
Open
access

|
Figure 4
Numerical evaluation of on-axis intensity for a 250 µm-thick flat Si111 crystal (R = ∞) with source at the crystal entrance surface (p = 0) calculated using equation (18) ![]() ![]() |