Figure 2
(a) Instrument functions measured on a 50 µm-thick PMMA sample at Q ≃ 2 Å−1 using the (533) reflection of silicon at 7.5 keV (orange diamonds) and the (931) reflection of silicon at 10.9 keV (black squares). The solid lines correspond to the best fit to the data assuming a pseudo-Voigt lineshape and the black dashed line shows the simulated instrument function. (b) Inelastic spectrum measured from a 10 µm-thick Fe sample at ambient conditions (dark squares) to highlight the effect of the improved energy resolution. The solid black line corresponds to the best fit to the data using the model described by Descamps et al. (2020). The orange line corresponds to the spectrum one would expect using the energy resolution demonstrated at 7.5 keV. In both figures, each symbol corresponds to one pixel on the X-ray detector. |