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Figure 5
(a) In situ electrical I–V curves recorded at 25, 100, 200, 300, 400 and 500°C. (b) Variation of electrical conductance as a function of annealing temperature. (c) In situ microbeam XRD profiles of ZnO thin film at 25, 100, 200, 300, 400 and 500°C. The ZnO(0002) Bragg peak with interference fringes is clear. (d) c-lattice constant and crystalline domain size of ZnO thin film as a function of annealing temperature. Strain relaxation significantly affects structural and electrical properties after 400°C during annealing.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 29| Part 4| July 2022| Pages 1114-1121
https://doi.org/10.1107/S1600577522006397
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