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Figure 5
(a) In situ electrical IV curves recorded at 25, 100, 200, 300, 400 and 500°C. (b) Variation of electrical conductance as a function of annealing temperature. (c) In situ microbeam XRD profiles of ZnO thin film at 25, 100, 200, 300, 400 and 500°C. The ZnO(0002) Bragg peak with interference fringes is clear. (d) c-lattice constant and crystalline domain size of ZnO thin film as a function of annealing temperature. Strain relaxation significantly affects structural and electrical properties after 400°C during annealing.

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