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Figure 5
(a) 2D-XEOL-XAFS mapping across the Ga K-edge (EK = 10367 eV) at 10 K on a single-crystalline GaN-(0001) thin film grown on a crystalline sapphire substrate. (b) Comparison of the XEOL intensity (offset along the y-axis) of the YL1 defect band and the fluorescence XAFS measured simultaneously as a function of the incident X-ray energy. The inset schematically illustrates the sample orientation relative to the polarization vector E of the incident X-ray beam and the direction of the collected XEOL and X-ray fluorescence XAFS signals.

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