view article
Figure 5
(a) 2D-XEOL-XAFS mapping across the Ga K-edge (EK = 10367 eV) at 10 K on a single-crystalline GaN-(0001) thin film grown on a crystalline sapphire substrate. (b) Comparison of the XEOL intensity (offset along the y-axis) of the YL1 defect band and the fluorescence XAFS measured simultaneously as a function of the incident X-ray energy. The inset schematically illustrates the sample orientation relative to the polarization vector E of the incident X-ray beam and the direction of the collected XEOL and X-ray fluorescence XAFS signals.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 29| Part 5| September 2022| Pages 1209-1215
https://doi.org/10.1107/S1600577522007287
Follow J. Synchrotron Rad.
Sign up for e-alerts
E-alerts
Follow J. Synchrotron Rad. on Twitter
Twitter
Follow us on facebook
Facebook
Sign up for RSS feeds
RSS