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Figure 1
Electron-collecting sensor cross section (750 µm thick). The majority of 40 keV photons will be absorbed in the top 90 µm of the sensor. The holes created by the photon absorption travel the relatively short distance to the top surface and the electrons travel the greater distance to the pixelated readout on the ASIC side. Note that, for hole-collecting material, the hole and electrons will each travel in the opposite direction.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 31| Part 5| September 2024| Pages 1217-1223
https://doi.org/10.1107/S160057752400643X
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