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Figure 3
Calculations for a symmetric Si 111 at 8 keV with thickness tc = 50 µm. The graphs show the electric field intensity inside the crystal as a function of the deviation angle θ − θB and penetration ratio −s/T (equivalent to a depth ratio − t/tc), for (a) Bragg |Dh|2, (b) Bragg |D0|2, (c) Laue |Dh|2, (d) Laue |D0|2.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 31| Part 6| November 2024| Pages 1469-1480
https://doi.org/10.1107/S160057752400924X
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