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Figure 1
(a) The 3D structure (not to scale) of the SiC XBPM device, featuring an n-type layer and a thick n+ substrate. (b) A 2D cross-section of the device (not to scale), showing the distance between the readout pixels (6 µm), the thickness of the n-type epitaxial layer (250 nm), and the n+ substrate (375 µm). The central region around the four pads (circular area of approximately 2 mm in diameter) is thinned using electrochemical dopant-selective etching.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 32| Part 6| November 2025| Pages 1396-1402
https://doi.org/10.1107/S1600577525007362
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