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Figure 3
Fabrication of bonded WGs (WGb) based on e-beam lithography and wafer bonding. (a) Principal processing steps: spin-coating of PMMA photoresist, e-beam lithography, dry etching, wafer bonding, dicing. (b) SEM inspection of (b-i) an etched channel in Si, (b-ii) exit face of a Ge channel, (b-iii) WG array in Si, and isolated channel in Si, with indicated width and height. (c) Infrared image of bonded wafer, showing some air inclusions.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 33| Part 2| March 2026| Pages 298-313
https://doi.org/10.1107/S1600577525011567
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