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Figure 4
Fabrication of crossed planar WGs (WGx type) by thin film deposition, soft alloy bonding and crossing of two planar WG lamellae. (a) Principal processing steps: sputter deposition of the desired layer sequence, soft alloy bonding, dicing, FIB polishing, crossing of two lamellae to form the WGx-type WG. (b) Overlay of two SEM images of a Ru/B4C/Ru WG, with indicated layer width. (c) SEM image showing the bond interface after FIB milling. (d) WGx alignment in the optical microscope at GINIX. The horizontal dark stripe corresponds to the region treated by the FIB. The diagonal lines are traces of the dicing in the Ge wafer. (e) Crossed lamellae forming the WGx, mounted on a holder, and ready to be used at the beamline.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 33| Part 2| March 2026| Pages 298-313
https://doi.org/10.1107/S1600577525011567
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