An induction heating system for in situ X-ray diffraction imaging: design, simulation and application to dislocation dynamics in semiconductors

Kabukcuoglu, M.P.; Sagias, N.; Hamann, E.; Richter, C.; Zuber, M.; Dadzis, K.; Hänschke, D.

doi:10.1107/S1600577526004728

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Figure 11
Three of the eight ex situ wafer maps (220, $[2\bar{2}0]$ and 400) recorded in the region marked by the blue rectangle in Fig. 7

, showing the final dislocation configuration after both thermal treatments. Variations in dislocation-contrast visibility were used to determine the Burgers vectors using the extinction criterion. Two prominent slip bands, P and Q, enter the ROI from the wafer edge.

JOURNAL OF
SYNCHROTRON
RADIATION

ISSN: 1600-5775

Volume 33| Part 4| July 2026|

https://doi.org/10.1107/S1600577526004728

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