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Figure 7
Schematic of the investigated Si wafer with an array of 10 × 10 Berkovich indentations at its center. The indents are referenced A–J (left–right) and 1–10 (top–bottom). The green rectangle indicates the FOV imaged during the in situ XWBT measurements; the blue box marks the ROI characterized ex situ after heating. |

journal menu![[Figure 7]](mad5004fig7.jpg)
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