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Figure 9
Concentration profile of Ge in Si calculated from the diffraction measurements for the doped crystal (Institute of Crystal Growth, Berlin, sample 84.7).

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 5| Part 3| May 1998| Pages 239-245
https://doi.org/10.1107/S0909049597019043
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