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Figure 2
White-beam Bragg-case section topographs in 115 reflection selecting 0.77 Å radiation of an AlxGa1−xAs/GaAs epitaxic layer with x = 0.43 implanted with a dose of 1.8 × 1014 ions cm−2 of 1 MeV Si ions taken at film-to-crystal distances of (a) 15 cm and (b) 30 cm. The left part of the topographs is covering the unimplanted part of the layer. The horizontal width of the picture covers 7 mm.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 7| Part 5| September 2000| Pages 318-325
doi:10.1107/S0909049500009420
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