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Figure 8
(a) Synchrotron rocking curve in symmetrical 400 reflection using 1.1 Å radiation for highly perfect AlxGa1−xAs/GaAs epitaxic layers with x = 0.43 implanted with a dose of 2 × 1014 ions cm−2 of 1.5 MeV Se ions. (b) The theoretical rocking curve obtained by numerical integration of the Takagi–Taupin equations corresponding to (a). (c) Calculation of the strain profile used for computation of curve (b): the three curves denoted by the thin, dashed and thick lines correspond to, respectively, the initial TRIM-95 vacancy profile, its transformation by diffusion, and the final profile obtained assuming the saturation is dependent on the local vacancy concentration approximated by a sine function.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 7| Part 5| September 2000| Pages 318-325
doi:10.1107/S0909049500009420
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